Electric power semiconductor device

Details Electric power semiconductor device Electric power semiconductor device

2007-11-06

2007-11-06

Wilczewski, Mary (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Wire contact, lead, or bond

C257S762000, C257S763000, C257S781000, C257S786000

Reexamination Certificate

active

10648347

ABSTRACT:
Semiconductor chips are connected to electrode terminals (6a, 6b) by wire bonding, and connecting conductors connect extending portions (60b, 60c) extending from a part of the electrode terminals (6b, 6c) to the circuit patterns (3a, 3b) by soldering, and thus the wire bonding points of the electrode terminals are reduced to thereby reduce an electric resistance and suppress heat generation and voltage drop.

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patent: 2000-323647 (2000-11-01), None
patent: 2002-134552 (2002-05-01), None
patent: 2003-13515 (2003-05-01), None

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