Electric power semiconductor device

Details Electric power semiconductor device Electric power semiconductor device

2006-01-10

2006-01-10

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

C257S674000, C257S668000, C257S694000, C257S695000, C257S696000

Reexamination Certificate

active

06984884

ABSTRACT:
A main lead (2) is a single body comprised of an inner lead (2a) and an outer lead (2b) which are integrally formed, the bonding wires are arranged in parallel and fixed onto the inner lead (2a) by the wire bonding portions (3b), and the outer lead are exposed from the mold resin to the outside for electrical connection, and a plurality of through holes (8) penetrating the main terminal lead are formed in the outer vicinity of the wire bonding portions (3b) within the inner lead (2a), and the through holes are arranged substantially in parallel to the arrangement direction of the wire bonding portions (3b) so as to correspond to the entire wire bonding portions (3b).

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