Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2011-04-19
2011-04-19
Nguyen, Khiem D (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S774000, C257SE21023, C257SE23011, C257SE23141, C438S584000, C977S762000
Reexamination Certificate
active
07928578
ABSTRACT:
A semiconductor electronic device that includes a semiconductor substrate having a top surface; a seed layer positioned on the substrate and having a notched wall extending transversely with respect to the substrate top surface, the wall defining a first recess extending into the seed layer with a height equal to a thickness of the seed layer; a first conductive nanowire in contact with the notched wall, the first conductive nanowire having a contact portion extending into the first recess and covering opposite sidewalls and a bottom of the first recess; a first insulating nanowire in contact with a sidewall of the first conductive nanowire; an insulating layer on the contact portion of the first conductive nanowire and having a first window substantially in correspondence with the contact portion of the first conductive nanowire; and a first conductive die on the insulating layer that includes a conductive contact extending into the first window and contacting the contact portion of the first conductive nanowire.
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Cerofolini Gianfranco
Mascolo Danilo
Jorgenson Lisa K.
Nguyen Khiem D
Seed IP Law Group PLLC
STMicroelectronics S.r.l.
Tarleton E. Russell
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