Electric fuse for a redundancy circuit

Details Electric fuse for a redundancy circuit Electric fuse for a redundancy circuit

1990-02-20

1991-01-08

Carroll, J.

357 4, 357 54, 357 56, 357 59, H01L 2712, H01L 2702, H01L 2934, H01L 2906

Patent

active

049840541

ABSTRACT:
The present invention comprises a field oxide film formed on a silicon substrate, an underlying film of polycrystal silicon formed on a portion thereof and an insulating film formed so as to cover the field oxide film comprising the underlying film. A surface stepped portion of the insulating film is formed by a portion with an underlying film and a portion without an underlying film under the insulating film, and a blowout portion of a fuse is formed along the surface stepped portion. There are terminal portions at both ends of the blowout portion of the fuse and an aluminum line is connected thereto. In addition, the whole portions comprising the fuse portion are covered with another insulating film and the whole is protected. The fuse is employed as one example in a redundancy circuit of a MOS dynamic RAM having redundancy memory cells.

REFERENCES:
patent: 4389715 (1983-06-01), Eaton, Jr. et al.
patent: 4503315 (1985-03-01), Kamioka et al.
patent: 4723155 (1988-04-01), Uchida
patent: 4748491 (1988-05-01), Takagi
patent: 4774561 (1988-09-01), Takagi
"A 256K RAM Fabricated with Molybdenum-Polysilicon Technology", IEEE International Solid-State Circuits Conference held 2/15/80 by Tsuneo Mano et al.
"Designing Static RAMS For Yield as Well as Speed", by Rahul Sud et al., Electronics, pp. 121-123 and 127-130, issued by McGra-Hill Book Company, Jul. 1981.

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