Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2005-01-04
2005-01-04
Hiteshew, Felisa (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S089000, C117S094000
Reexamination Certificate
active
06837928
ABSTRACT:
Carbon nanotubes are implemented in a manner that facilitates their orientation and arrangement for a variety of applications. According to an example embodiment of the present invention, an electric field is used to orient carbon nanotubes along a direction of the electric field (e.g., along a direction generally parallel to an electric field applied between two electrodes). In one implementation, the electric field is used to orient a nanotube that has already been grown. In another implementation, the electric field is used in situ, with nanotubes being aligned while they are grown. With these approaches, carbon nanotubes can be selectively oriented for one or more of a variety of implementations. Furthermore, arrays of aligned carbon nanotubes can be formed extending between circuit nodes having both similar and different orientations.
REFERENCES:
patent: 6250984 (2001-06-01), Jin et al.
Dai Hongjie
Zhang Yuegang
Hiteshew Felisa
The Board of Trustees of the Leland Stanford Junior University
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