Electric field induced spin-polarized current

Details Electric field induced spin-polarized current Electric field induced spin-polarized current

2006-05-02

2006-05-02

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Direct application of electrical current

C438S050000, C438S059000, C438S073000

Reexamination Certificate

active

07037807

ABSTRACT:
A device and a method for generating an electric-field-induced spin current are disclosed. A highly spin-polarized electric current is generated using a semiconductor structure and an applied electric field across the semiconductor structure. The semiconductor structure can be a hole-doped semiconductor having finite or zero bandgap or an undoped semiconductor of zero bandgap. In one embodiment, a device for injecting spin-polarized current into a current output terminal includes a semiconductor structure including first and second electrodes, along a first axis, receiving an applied electric field and a third electrode, along a direction perpendicular to the first axis, providing the spin-polarized current. The semiconductor structure includes a semiconductor material whose spin orbit coupling energy is greater than room temperature (300 Kelvin) times the Boltzmann constant. In one embodiment, the semiconductor structure is a hole-doped semiconductor structure, such as a p-type GaAs semiconductor layer.

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