Electricity: electrical systems and devices – Discharging or preventing accumulation of electric charge – Specific conduction means or dissipator
Patent
1993-03-15
1994-10-18
Pellinen, A. D.
Electricity: electrical systems and devices
Discharging or preventing accumulation of electric charge
Specific conduction means or dissipator
361 56, 361 91, H05K 118
Patent
active
053573978
ABSTRACT:
An electrostatic discharge device having a small separation between two traces wherein a voltage above a desired threshold will discharge across the separation through the mechanism of cold cathode electric field emission. Conditions which permit quantum mechanical tunneling of electrons across the emitting cathode/vacuum potential barrier, such as low emitter work function, electric field enhancing geometry, and cathode/anode separation size, determine the voltage necessary for discharge by this mechanism. One device has a first conductive trace formed on an insulating layer and then masked and etched to leave an undercut with a sharp point. A second conductive trace is formed in the undercut opposite the point, resulting in a three-dimensional cross section having a very small separation. A second device has the point formed by depositing a metal layer over a spacing in a dielectric layer, and then etching out the dielectric layer.
REFERENCES:
patent: 3676742 (1972-07-01), Russell et al.
patent: 4322777 (1982-03-01), Ueta et al.
patent: 4617605 (1986-10-01), Obrecht et al.
Bock et al., "New Field-Emitter Switch for ESD Protection of Microwave Circuits", Electronics Letters, Sep. 10, 1992, vol. 28, No. 19, pp. 1822-1824.
Pancholy et al., "C-MOS/SOS Gate-Protection Networks", IEEE Transactions on Electron Devices, vol. ED-25, No. 8, Aug. 1978, pp. 917-925.
DeBar et al., "Spark Gap on Module to Protect MOS-LSI Chips", IBM Technical Disclosure Bulletin, vol. 19, No. 8, Jan. 1977, pp. 3110-3111.
Bock et al., "Microwave Devices by New Metallization Strategy", EOS/ESD Symposium Proceedings, 1990, pp. 193-195.
Linholm et al., "Electrostatic Gate Protection Using an Arc Gap Device", Proceedings 11th IEEE Int'l. Rel. Phys. Symp., 1973, pp. 198-202.
Pancholy et al., "Gate Protection for CMOS/SOS*", Proceedings 15th IEEE Int'l. Rel. Phys. Symp., 1977, pp. 132-137.
Hickernell et al, "Voltage Brkdown Characts. of Close Spaced Alum. Arc Gap Struct. on Oxidized Silicon", Proceedings 15th IEEE Intl. Rel. Phys. Symp., 1977, pp. 198-202.
Holland et al., "A Study of Field Emission Microtriodes", IEEE Transactions on Electron Devices, vol. 38, No. 10, Oct. 1991.
Utsumi, "Keynote Address Vacuum Microelectronics: What's New and Exciting", IEEE Transactions on Electron Devices, vol. 38, No. 10, Oct. 1991.
Hewlett--Packard Company
Medley Sally C.
Pellinen A. D.
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