Electric field-controlled semiconductor device

Details Electric field-controlled semiconductor device Electric field-controlled semiconductor device

1976-11-08

1979-01-02

Clawson, Jr., Joseph E.

357 22, 357 35, 357 36, 357 38, 357 57, 357 58, H01L 2974

Patent

active

041329961

ABSTRACT:
An electric field-controlled thyristor having improved voltage blocking characteristics comprises a semiconductor substrate with a cathode region in one major surface and interdigitated anode and gate regions in the other major surface. The thyristor includes a single high voltage junction which is capable of blocking voltages of either positive or negative polarity by the application of a control voltage, which is a fraction of the blocking voltage, between the anode and gate regions.

REFERENCES:
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patent: 3432920 (1969-03-01), Rosenzweig
patent: 3535599 (1970-10-01), Deak
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patent: 3810049 (1974-04-01), Krause
patent: 3893017 (1975-07-01), Williams
R. Zuleeg, "A Silicon Space-Charge-Limited Triode and Analog Transistor," S-S Electronics, vol. 10, 1967, pp. 449-460.
T. Shao et al., "The Physical Mechanism of the Chargistor in Terms of Minority Carrier Exclusion and Injection," IEEE Trans. on Elec. Dev., vol. ED-14 #6, Jun. 1967, pp. 306-313.

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