Active solid-state devices (e.g. – transistors – solid-state diode – Point contact device
Reexamination Certificate
2011-01-25
2011-01-25
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Point contact device
C257SE45002, C257SE45003
Reexamination Certificate
active
07875883
ABSTRACT:
The present invention relates to a transistor for selecting a storage cell and a switch using a solid electrolyte. In a storage cell, a metal is stacked on a drain diffusion layer of a field-effect transistor formed on a semiconductor substrate surface. The solid electrolyte using the metal as a carrier is stacked on the metal. The solid electrolyte contacts with the metal via a gap, and the metal is connected to a common grounding conductor. A source of the field-effect transistor is connected to a column address line, and a gate of the field-effect transistor is connected to a row address line.
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Kazuya Terabe, et al. , “Quantum point contact switch realized by solid electrochemical reaction”, Riken Review, Jul. 2001, No. 37, pp. 7 to 8.
Aono Masakazu
Hasegawa Tsuyoshi
Kawaura Hisao
Nakayama Tomonobu
Sakamoto Toshitsugu
Huber Robert
Japan Science and Technology Agency
Le Thao X
NEC Corporation
Riken
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