Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1995-03-30
1998-10-13
Brown, Peter Toby
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 66, 257347, 257368, 257379, 359 55, 359 59, H01L 2904, H01L 2978
Patent
active
058215590
ABSTRACT:
A circuit adapted to dynamically activate an electro-optical display device is constructed from a thin-film gate-insulated semiconductor device. This device comprises PMOS TFTs producing only a small amount of leakage current. Besides the dynamic circuit, a CMOS circuit comprising both NMOS and PMOS thin-film transistors is constructed to drive the dynamic circuit.
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Takemura Yasuhiko
Yamazaki Shunpei
Brown Peter Toby
Ferguson Jr. Gerald J.
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
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