Electric device and method for fabricating the same

Details Electric device and method for fabricating the same Electric device and method for fabricating the same

2006-06-06

2006-06-06

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S758000

Reexamination Certificate

active

07057288

ABSTRACT:
A wiring groove is formed in an insulating film, and then a reformed layer is formed in the vicinity of the wiring groove in the insulating film. Thereafter, a conductive film is buried in the wiring groove, thereby forming a wire. Subsequently, the reformed layer is removed to form a slit, and then a low-dielectric-constant film having a relative dielectric constant lower than the insulating film is buried in the slit.

REFERENCES:
patent: 5616959 (1997-04-01), Jeng
patent: 6162743 (2000-12-01), Chu et al.
patent: 6291628 (2001-09-01), Chen et al.
patent: 6483193 (2002-11-01), Usami
patent: 2002/0052106 (2002-05-01), Ikura
patent: P2002-93903 (2002-03-01), None

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