Amplifiers – With semiconductor amplifying device – Including temperature compensation means
Reexamination Certificate
2007-09-18
2007-09-18
Nguyen, Khanh Van (Department: 2817)
Amplifiers
With semiconductor amplifying device
Including temperature compensation means
C330S133000, C330S285000
Reexamination Certificate
active
11149265
ABSTRACT:
An RF power module in which operating voltage is controlled by a control signal based on amplitude information includes a temperature detecting device which is provided over a semiconductor chip formed with an amplifying transistor or a semiconductor chip formed with a power source circuit; and a detector having a hysteresis characteristic which is provided over the semiconductor chip formed with the device or a different semiconductor chip, applies a bias to the temperature detecting device to compare the state of the device at two reference levels, outputs a signal indicating abnormality when judging that the temperature of the semiconductor chip formed with the temperature detecting device is above a predetermined temperature, and outputs a signal indicating normality when judging that the temperature of the semiconductor chip is below a second predetermined temperature lower than the predetermined temperature.
REFERENCES:
patent: 6194968 (2001-02-01), Winslow
patent: 6958649 (2005-10-01), Nagamori et al.
patent: 2000-151310 (2000-05-01), None
patent: 2004-007443 (2004-01-01), None
Ishimoto Kazuhiko
Koshio Kazuhiro
Matsushita Kouichi
Shimamoto Kenichi
Tsutsui Takayuki
Hitachi Hybrid Network Co., Ltd.
Mattingly ,Stanger ,Malur & Brundidge, P.C.
Nguyen Khanh Van
Renesas Technology Corp.
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