Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Patent
1991-08-13
1993-07-20
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
257 21, 257443, 257257, 257184, 364807, 307201, 307324, 385 14, H01L 29205, H01L 3108, H01L 2714
Patent
active
052296237
ABSTRACT:
A semiconductor device is disclosed, which includes a multiple negative differential resistance element having negative differential resistance characteristics at at least two places in the current-voltage characteristics, and which is suitable for constructing a neural network having a high density integration and a high reliability.
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H. Kurata, et al., "Nobel Quantum Well Optical Bistability Device Combined with a Negative Resistance Device", Technical Research Report of the Electronics Information Communication Society, vol. 88, No. 6, 1988, pp. 63-67. Provided in Japanese. English translation unavailable to applicants' attorney.
Susanta Sen, et al., "Integration of GaAs/AlAs Resonant Tunneling Diodes for Digital and Analog Applications with Reduced Circuit Complexity", Technical Digest of GaAs IC Symposium, Portland, Oregon, 13th-16th Oct. 1987, IEEE, pp. 61.varies.64.
Hans P. Graf, et al, "VLSI Implementation of a Neural Network Model", Computer, vol. 21, No. 3, Mar. 1988, IEEE, pp. 41-48.
Doug Conner, "Data Transformation Explains the Basics of Neural Networks", EDN Electrical Design News, vol. 33, No. 10, 12th May 1988, pp. 138-144.
Mizuta Hiroshi
Takahashi Susumu
Tanoue Tomonori
Hitachi , Ltd.
Jackson Jerome
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