Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2006-03-28
2006-03-28
Le, Dung (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S737000, C257S719000, C349S149000, C349S150000
Reexamination Certificate
active
07019393
ABSTRACT:
On a glass substrate of a liquid crystal display device, electrode parts to which metallic electrodes (bumps) of an IC circuit are connected from an upper part are formed. The electrode parts are formed by opening an interlayer dielectric film at parts corresponding to metal wiring and forming land shaped electrode pads in the opening parts. In this invention, the planar forms of the electrode pads are smaller than the opening parts of the interlayer dielectric film. Thus, the planarization of the peripheral surfaces around the electrode parts is improved. Accordingly, integrated circuit devices (IC) or semiconductor chips can be connected with high reliability.
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patent: 4818728 (1989-04-01), Rai et al.
patent: 5371037 (1994-12-01), Yonehara
patent: 6245594 (2001-06-01), Wu et al.
patent: 2003/0168734 (2003-09-01), Fang
patent: 2004/0032024 (2004-02-01), Lee et al.
patent: 2004/0099949 (2004-05-01), Cho
patent: 2005/0218476 (2005-10-01), Lee et al.
Depke Robert J.
Le Dung
Sony Corporation
Tran Long
Trexler, Bushnell Giangiorgi, Blackstone & Marr, Ltd.
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