Elastic boundary wave device and method of manufacturing the...

Electrical generator or motor structure – Non-dynamoelectric – Piezoelectric elements and devices

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C310S31300R

Reexamination Certificate

active

10984836

ABSTRACT:
An elastic boundary wave device includes a first piezoelectric substrate, IDTs arranged thereon, a first dielectric film having a smoothed surface that covers the IDTs, a second substrate that is a silicon-based substrate, and a second dielectric film provided on a main surface of the second substrate. The smoothed surface of the first dielectric surface and a surface of the second dielectric film are joined together.

REFERENCES:
patent: 5838089 (1998-11-01), Dreifus et al.
patent: 5923231 (1999-07-01), Ohkubo et al.
patent: 6046656 (2000-04-01), Mishima
patent: 6806795 (2004-10-01), Shin
patent: 7109828 (2006-09-01), Takayama et al.
patent: 6-326553 (1994-11-01), None
patent: 11-340268 (1999-12-01), None
International Publication No. WO 98/51011, published Nov. 11, 1998.
“Highly Piezoelectric Boundary Waves in Si/SiO2/LiNbO3Structure”, Japan Society for the Promotion of Science, Takashi Yamashita, et al., Jul 11, 1997, pp. 19-24, with English abstract.
Hideki Takagi; Room-Temperature Bonding of Silicon Wafers by means of the Surface Activation Method;Report of Mechanical Engineering Laboratory No. 189; Dec. 2000; pp. 76-84.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Elastic boundary wave device and method of manufacturing the... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Elastic boundary wave device and method of manufacturing the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Elastic boundary wave device and method of manufacturing the... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3728012

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.