EL display device, driving method thereof, and electronic...

Electric lamp and discharge devices: systems – Plural power supplies – Plural cathode and/or anode load device

Reexamination Certificate

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C315S169300, C315S169200

Reexamination Certificate

active

06452341

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates to an EL (electro-luminescence) display device formed by constructing a semiconductor device (i.e., a device made of a semiconductor thin film) on a substrate and relates to electronic equipment (electronic device) in which the EL display device is used as a display panel (display portion).
2. Description of Related Art
In recent years, great advances have been made in a technique for forming TFTs on a substrate, and development has proceeded in the application thereof to an active matrix type display. Especially, a TFT using a polysilicon film is higher in electron field-effect mobility than a conventional TFT using an amorphous silicon film, and can operate at a high speed. Therefore, it has been made possible to control a pixel by a driving circuit formed on the same substrate on which the pixel is also formed, although the pixel had been conventionally controlled by the driving circuit disposed outside the substrate.
The active matrix type display is attracting public attention because it can obtain various advantages, such as reduced manufacturing costs, reduced size of the display device, increased yields, and reduced throughput, by constructing various circuits or elements on the same substrate.
Conventionally, the pixel of the active matrix type EL display has been generally constructed as shown in FIG.
3
. In
FIG. 3
, reference character
301
designates a TFT that functions as a switching element (hereinafter, referred to as switching TFT),
302
designates a TFT that functions as an element (current controlling element) to control a current supplied to an EL element
303
(hereinafter, referred to as current controlling TFT), and
304
designates a capacitor (capacitance storage). The switching TFT
301
is connected to a gate wiring line
305
and a source wiring line
306
(data wiring line). The drain of the current controlling TFT
302
is connected to the EL element
303
, and the source thereof is connected to a current-feed line
307
.
When the gate wiring line
305
is selected, the gate of the switching TFT
301
is opened, the data signal of the source wiring line
306
is then stored in the capacitor
304
, and the gate of the current controlling TFT
302
is opened. After the gate of the switching TFT
301
is closed, the gate of the current controlling TFT
302
is kept opening by the charge stored in the capacitor
304
. During that interval, the EL element
303
emits light. The amount of luminescence of the EL element
303
changes according to the amount of a flowing current.
At this time, the amount of current supplied to the EL element
303
is controlled by the gate voltage of the current controlling TFT
302
. This is shown in FIG.
4
.
FIG.
4
(A) is a graph showing transistor characteristics of the current controlling TFT. Reference character
401
is called Id-Vg characteristic (or Id-Vg curve). Herein, Id is a drain current, and Vg is a gate voltage. The amount of a flowing current corresponding to an arbitrary gate voltage can be known from this graph.
Normally, the region shown by the dotted line
402
of the Id-Vg characteristic is used when the EL element is driven. An enlarged view of the enclosed region of the dotted line
402
is shown in FIG.
4
(B).
In FIG.
4
(B), the region shown by the oblique lines is called a sub-threshold region. In practice, it is indicated as a region in which a gate voltage is near or less than a threshold voltage (Vth). The drain current exponentially changes according to the change of the gate voltage in this region. Using this region, the current is controlled by the gate voltage.
The data signal input into a pixel by opening the switching TFT
301
is first stored in the capacitor
304
, and the data signal directly acts as the gate voltage of the current controlling TFT
302
. At this time, the drain current with respect to the gate voltage is determined by one-to-one according to the Id-Vg characteristic shown in FIG.
4
(A). That is, a given current flows through the EL element
303
corresponding to the data signal, and the EL element
303
emits light by the amount of luminescence corresponding to the amount of the current.
The amount of luminescence of the EL element is controlled by the data signal, as mentioned above, and thereby gradation display is performed. This is a so-called analog gradation method, in which the gradation display is performed by a change in the amplitude of the signal.
However, there is a defect in that the analog gradation method is very weak in the characteristic variability of TFTs. For example, let it be assumed that the Id-Vg characteristic of a switching TFT differs from that of a switching TFT of an adjacent pixel that displays the same gradation level (i.e., a shift is performed toward a plus or a minus side overall).
In this situation, drain currents of the switching TFTs differ from each other, though depending on the level of the variability, and thus a different gate voltage will be applied to the current controlling TFT of each pixel. In other words, a different current flows through each EL element, and, as a result, a different amount of luminescence is emitted, and the display of the same gradation level cannot be achieved.
Additionally, even if an equal gate voltage is applied to the current controlling TFT of each pixel, the same drain current cannot be output if the Id-Vg characteristic of the current controlling TFTs has variability. Additionally, as is clear from FIG.
4
(A), a region is used in which the drain current exponentially changes according to a change in the gate voltage, and, therefore, a situation will occur in which, if the Id-Vg characteristic shifts most slightly, the amount of current to be output becomes greatly different even if an equal gate voltage is applied thereto. If so, adjacent pixels will have a great difference in the amount of luminescence of the EL element.
In practice, each individual variability of the switching TFT and the current controlling TFT acts synergistically, and a stricter condition will be imposed. The analog gradation method is extremely sensitive to the characteristic variability of the TFTs, as mentioned above, and this has caused an obstruction to realizing the multicolor of the conventional active matrix type EL display device.
SUMMARY OF THE INVENTION
The present invention was made in consideration of the above problem, and it is an object of the present invention to provide an active matrix type EL display device capable of performing clear multi-gradation color display. It is another object of the present invention to provide high-performance electronic equipment provided a with such an active matrix type EL display device.
The present applicant thought that a digital gradation method in which the current controlling TFT is used only as a switching element for supplying a current is better than the conventional analog gradation method in which the amount of luminescence of the EL element is controlled by controlling a current, in order to design a pixel structure to be unsusceptible to the influence of the characteristic variability of the TFT.
From this, the present applicant thought that the most desirable gradation display method in the active matrix type EL display device is a divided gradation display method, more specifically, a gradation display method under a time-division method (hereinafter, designated as time-division gradation or time-division gradation display).
In practice, the time-division gradation display is performed as follows. A description is herein given of a case in which the full color display of 256-gradation (16,770,000 colors) is performed according to an 8-bit digital driving method.
First of all, one frame of an image is divided into eight sub-frames. Herein, one cycle when data is input to all pixels of a displayed area is called one frame. Oscillation frequency in a normal EL display device is 60 Hz, in other words, 60 frames are formed per second. Flickering of the image, for example, begi

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