EL display device and electronic device

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C315S169200, C315S169100, C257S059000, C257S072000, C257S347000

Reexamination Certificate

active

10848147

ABSTRACT:
An EL display device capable of producing a vivid multi-gradation color display, and an electronic device having the EL display device. An electric current supplied to an EL element110is controlled by providing a resistor109between a current control TFT108and the EL element110formed in a pixel104, the resistor109having a resistance higher than the on-resistance of the current control TFT108. The gradation display is executed by a time-division drive system which controls the emission and non-emission of light of the EL element110by time, preventing the effect caused by a dispersion in the characteristics of the current control TFT108.

REFERENCES:
patent: 4005471 (1977-01-01), Magdo et al.
patent: 4356429 (1982-10-01), Tang
patent: 4539507 (1985-09-01), VanSlyke et al.
patent: 4720432 (1988-01-01), VanSlyke et al.
patent: 4769292 (1988-09-01), Tang et al.
patent: 4885211 (1989-12-01), Tang et al.
patent: 4950950 (1990-08-01), Perry et al.
patent: 5047687 (1991-09-01), VanSlyke
patent: 5059861 (1991-10-01), Littman et al.
patent: 5059862 (1991-10-01), VanSlyke et al.
patent: 5061617 (1991-10-01), Maskasky
patent: 5073446 (1991-12-01), Scozzafava et al.
patent: 5095248 (1992-03-01), Sato
patent: 5151629 (1992-09-01), VanSlyke
patent: 5294869 (1994-03-01), Tang et al.
patent: 5294870 (1994-03-01), Tang et al.
patent: 5302966 (1994-04-01), Stewart
patent: 5525867 (1996-06-01), Williams
patent: 5640067 (1997-06-01), Yamauchi et al.
patent: 5684365 (1997-11-01), Tang et al.
patent: 5714968 (1998-02-01), Ikeda
patent: 5793342 (1998-08-01), Rhoads
patent: 5839456 (1998-11-01), Han
patent: 5882761 (1999-03-01), Kawami et al.
patent: 5929464 (1999-07-01), Yamazaki et al.
patent: 5962962 (1999-10-01), Fujita et al.
patent: 5990629 (1999-11-01), Yamada et al.
patent: 6084579 (2000-07-01), Hirano
patent: 6104041 (2000-08-01), Hsueh et al.
patent: 6147451 (2000-11-01), Shibata et al.
patent: 6194837 (2001-02-01), Ozawa
patent: 6204610 (2001-03-01), Komiya
patent: 6215244 (2001-04-01), Kuribayashi et al.
patent: 6246179 (2001-06-01), Yamada
patent: 6268842 (2001-07-01), Yamazaki et al.
patent: 6281634 (2001-08-01), Yokoyama
patent: 6303963 (2001-10-01), Ohtani et al.
patent: 6366025 (2002-04-01), Yamada
patent: 6369507 (2002-04-01), Arai
patent: 6380007 (2002-04-01), Koyama
patent: 6380687 (2002-04-01), Yamazaki
patent: 6392628 (2002-05-01), Yamazaki et al.
patent: 6452341 (2002-09-01), Yamauchi et al.
patent: 6469317 (2002-10-01), Yamazaki et al.
patent: 6483484 (2002-11-01), Yamazaki et al.
patent: 0 717 445 (1996-06-01), None
patent: 0 717 446 (1996-06-01), None
patent: 0 781 075 (1997-06-01), None
patent: 62-090260 (1987-04-01), None
patent: 8-078159 (1996-03-01), None
patent: 8-234683 (1996-09-01), None
patent: 8-241048 (1996-09-01), None
patent: 0 776 147 (1997-05-01), None
patent: 9-148066 (1997-06-01), None
patent: 10-189525 (1998-07-01), None
patent: 10-214042 (1998-08-01), None
patent: 10-214060 (1998-08-01), None
patent: 10-232649 (1998-09-01), None
patent: 10-247735 (1998-09-01), None
patent: 10-294280 (1998-11-01), None
patent: 10-312173 (1998-11-01), None
patent: 11-054268 (1999-02-01), None
patent: 11-191628 (1999-07-01), None
patent: 11-345767 (1999-12-01), None
patent: 11-354442 (1999-12-01), None
patent: WO98/33165 (1998-07-01), None
patent: WO98/48403 (1998-10-01), None
patent: WO99/38148 (1999-07-01), None
Shimokawa et al., “Characterization of High-Efficiency Cast-Si Solar Cell Wafers by MBIC Measurement,” Japanese Journal of Applied Physics, vol. 27, No. 5, May, 1998, pp. 751-758.
European Search Report dated May 27, 2002.
S. Moniruzzaman et al., “Structure of polycrystalline silicon films deposited at low temperature by plasma CVD on substrates exposed to different plasma,” Thin Solid Film, vol. 337, pp. 27-31, 1999.
G. Fortunato, “Polycrystalline silicon thin-film transistors: A continuous evolving technology,” Thin Solid Films, vol. 296, pp. 82-90, 1997.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

EL display device and electronic device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with EL display device and electronic device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and EL display device and electronic device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3943139

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.