Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element
Reexamination Certificate
2003-12-29
2008-11-25
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Including integrally formed optical element
C438S099000, C257SE21352
Reexamination Certificate
active
07456037
ABSTRACT:
To decrease the number of layers while keeping or improving the performance of an EL element, so that the production cost is reduced. Cathodes (106, 107), a light emitting layer (108), an anode (109), and a passivation film (110) are formed on pixel electrodes (104, 105). Thereafter, the vicinity of the interface between the light emitting layer (108) and the anode (109) are doped with a halogen element through the passivation film (110) and the anode (109). This leads to formation of a hole conveying region (111) that functions as a hole conveying layer, thereby enhancing the light emission efficiency.
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Cook Alex Ltd.
Geyer Scott B.
Nikmanesh Seahvosh J
Semiconductor Energy Laboratory Co,. Ltd.
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