EL display device and a method of manufacturing the same

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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C438S099000, C257SE21352

Reexamination Certificate

active

07456037

ABSTRACT:
To decrease the number of layers while keeping or improving the performance of an EL element, so that the production cost is reduced. Cathodes (106, 107), a light emitting layer (108), an anode (109), and a passivation film (110) are formed on pixel electrodes (104, 105). Thereafter, the vicinity of the interface between the light emitting layer (108) and the anode (109) are doped with a halogen element through the passivation film (110) and the anode (109). This leads to formation of a hole conveying region (111) that functions as a hole conveying layer, thereby enhancing the light emission efficiency.

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