Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2000-09-13
2002-09-03
Ho, Hoai (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000
Reexamination Certificate
active
06445005
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to an EL (Electro-luminescence) display device formed by fabricating a semiconductor device (a device utilizing a semiconductor thin film; typically a thin film transistor) on a substrate, and an electronic device having such an EL display device as a display portion.
2. Description of the Related Art
A technique for forming a thin film transistor (hereinafter referred to as the TFT) on a substrate has been significantly improved in these days, and development for application thereof to an active matrix type display device has continued. In particular, a TFT utilizing a polysilicon film has a field effect mobility higher than that obtainable in a TFT utilizing a conventional amorphous silicon film, thereby realizing an operation at higher speed. Thus, it becomes possible to control pixels by a driving circuit formed on the identical substrate on which the pixels are formed, which is different from the conventional case in which the pixels are controlled by a driving circuit formed in the outside of the substrate.
Such an active matrix type display device has drawn much attention thereto since the device can realize various advantages, such as reduction in manufacturing cost, down-sizing of a display device, an improved yield, a reduced throughput or the like, by fabricating various circuits and devices on one and the same substrate.
In an active matrix EL display device, each pixel is provided with a switching device made of a TFT, and a driving device for controlling a current is activated by the switching device to cause an EL layer (more strictly speaking, a light emitting layer) to emit light. The EL display device is disclosed, for example, in Japanese Laid-open Patent Publication No. Hei 10-189252.
Thus, the present invention is intended to provide an inexpensive EL display device capable of displaying an image with high definition. Furthermore, the present invention is also intended to provide an electronic device having a high recognizability of a display portion by utilizing such an EL display device as the display portion.
SUMMARY OF THE INVENTION
The present invention will be described with reference to FIG.
1
. In
FIG. 1
, reference numeral
101
denotes a substrate having an insulating surface. As the substrate
101
, an insulating substrate such as a quartz substrate can be used. Alternatively, various kinds of substrate, such as a glass substrate, a semiconductor substrate, a ceramic substrate, a crystallized substrate, a metal substrate, or a plastic substrate, can be used by providing an insulating film on a surface thereof.
On the substrate
101
, pixels
102
are formed. Although only three of the pixels are illustrated in
FIG. 1
, a higher number of pixels are actually formed in matrix. In addition, although one of these three pixels will be described below, the other pixels have the same structure.
In each of the pixels
102
, two TFTs are formed; one of them is a switching TFT
103
, and the other is a current control TFT
104
. A drain of the switching TFT
103
is electrically connected to a gate of the current control TFT
104
. Furthermore, a drain of the current control TFT
104
is electrically connected to a pixel electrode
105
(which in this case, also functions as a cathode of an EL element). The pixel
102
is thus formed.
Various wirings of the TFT as well as the pixel electrode can be formed of a metal film having a low resistivity. For example, an aluminum alloy film may be used for this purpose.
Following the fabrication of the pixel electrode
105
, an insulating compound
106
(hereinbelow, referred to as the alkaline compound) including an alkali metal or an alkaline-earth metal over all of the pixel electrodes. Note that the outline of the alkaline compound is indicated by a dotted line in FIG.
1
. This is because the alkaline compound
106
has a thickness which is as thin as several nm, and it is not known whether the compound
106
is formed as a layer or in an island-shape.
As the alkaline compound, lithium fluoride (LiF), lithium oxide (Li
2
O), barium fluoride (BaF
2
), barium oxide (BaO), calcium fluoride (CaF
2
), calcium oxide (CaO), strontium oxide (SrO), or cesium oxide (Cs
2
O) can be used. Since these are insulating materials, short-circuiting between the pixel electrodes does not occur even when the alkaline compound
106
is formed as a layer.
It is of course possible to use as a cathode a known conductive material as an MgAg electrode. However, in this case, the cathode itself has to be selectively formed or patterned into a certain shape in order to avoid short-circuiting between the pixel electrodes.
After the alkaline compound
106
is formed, an EL layer (Electro-luminescence layer)
107
is formed thereover. Although any known material and/or structure can be employed for the EL layer
107
, a material capable of emitting white light is used in the present invention. As the structure, only a light emitting layer providing a field for recombination may be employed for the EL layer. If necessary, an electron injection layer, an electron transport layer, a hole transport layer, an electron blocking layer, a hole device layer, or a hole injection layer may be further layered. In the present specification, all of those layered intended to realize injection, transport or recombination of carriers are collectively referred to as the EL layer.
As an organic material to be used as the EL layer
107
, either a low-molecule type organic material or a polymer type (high-molecule type) organic material can be used. However, it is desirable to use a polymer type organic material that can be formed by an easy formation technique such as a spin coat technique, a printing technique or the like. The structure illustrated in
FIG. 1
is of the color display scheme in which an EL layer for emitting white light is combined with a color filter.
Alternatively, a color display scheme in which an EL layer for emitting blue or blue-green light is combined with fluorescent material (fluorescent color conversion layer; CCM), or another color display scheme in which EL layers respectively corresponding to RGB are overlaid one upon another to provide color display, can also be employed.
Over the EL layer
107
, a transparent conductive film is formed as an anode
108
. As the transparent conductive film, a compound of indium oxide and tin oxide (referred to as ITO), a compound of indium oxide and zinc oxide, tin oxide or zinc oxide can be used.
Over the anode
108
, an insulating film as a passivation film
109
is provided. As the passivation film
109
, a silicon nitride film or a silicon oxynitride film (represented as SiOxNy) is preferably used. Although a silicon oxide film may be used, an insulating film with as low an oxygen content as possible is preferred.
The substrate fabricated up to this stage is referred to as an active matrix substrate in the present application. More specifically, the substrate on which a TFT, a pixel electrode electrically connected to the TFT, and an EL element (a capacitor made of a cathode, an EL layer, and an anode) utilizing the pixel electrode as the cathode are formed is referred to as the active matrix substrate.
Furthermore, a counter substrate
110
is attached to the active matrix substrate with the EL element being interposed therebetween. The counter substrate
110
is provided with a light shielding film
112
and color filters
113
a
to
113
c.
At this situation, the light shielding film
112
is provided so that a gap
111
formed between the pixel electrodes
105
is unseen from the viewing direction of an observer (i.e., from a direction normal to the counter substrate.) More specifically, the light shielding film
112
is provided to overlap (align with) the periphery of the pixel when viewed from the direction normal to the counter substrate. This is because this portion is non-emitting portion, and furthermore, electric field becomes complicated at the edge portion of the pixel electrode and thus ligh
Konuma Toshimitsu
Mizukami Mayumi
Yamazaki Shunpei
Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Ho Hoai
Huynh Andy
Semiconductor Energy Laboratory Co,. Ltd.
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