Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2007-01-30
2007-01-30
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C257S059000, C257S072000, C257SE27111
Reexamination Certificate
active
10891631
ABSTRACT:
Formed on a glass substrate is an EL element including an anode, an organic light emitting layer, and a cathode. A first protective film is formed on a surface of the EL element to cover the EL element through a dry process. A second protective film is then formed on a surface of the first protective film to cover the first protective film by using polysilazane through a wet process. Even if an uncovered portion is left in the first protective film owing to the existence of a foreign matter thereon, the second protective film covers the uncovered portion to avoid intrusion of oxygen or other gases, moisture, etc. into the EL element from the outside.
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Kidokoro Atsushi
Takeuchi Kazuyoshi
Tomida Ryouichi
Anya Igwe U.
Baumeister B. William
Kabushiki Kaisha Toyota Jidoshokki
Morgan & Finnegan L.L.P.
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