Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2011-08-23
2011-08-23
Matthews, Colleen A (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257SE23149
Reexamination Certificate
active
08004059
ABSTRACT:
An eFuse, includes: a substrate and an insulating layer disposed on the substrate; a first layer including a single crystal or polycrystalline silicon disposed on the insulating layer; a second layer including a single crystal or polycrystalline silicon germanium disposed on the first layer, and a third layer including a silicide disposed on the second layer. The Ge has a final concentration in a range of approximately five percent to approximately twenty-five percent.
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Chidambarrao Dureseti
Henson William K.
Kim Deok-Kee
Kothandaraman Chandrasekharan
Abate Esq. Joseph P.
International Business Machines - Corporation
Matthews Colleen A
Scully , Scott, Murphy & Presser, P.C.
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