Radiant energy – Electrically neutral molecular or atomic beam devices and...
Patent
1992-07-31
1994-06-14
Berman, Jack I.
Radiant energy
Electrically neutral molecular or atomic beam devices and...
2504921, 2504922, H05H 302
Patent
active
053212606
ABSTRACT:
Primary molecules are formed by sublimation in a sublimation chamber (2), they are then transferred at a transfer flow-rate to a decomposition head (10) at a higher temperature, and they are transformed therein into secondary molecules that are lighter in weight to form molecular beams (16). In accordance with the invention, the transfer flow-rate is adjusted by adjusting an effective vector flow-rate which is the vector flow-rate of a vector gas inserted into the sublimation chamber via a feed tube (26) and sucked out via a suction tube (30). The invention applies, in particular, to making III-V type semiconductor components by molecular beam epitaxy.
REFERENCES:
patent: 3866039 (1975-02-01), Geller et al.
patent: 4664063 (1987-05-01), Ashizawa et al.
patent: 5025751 (1991-06-01), Takatani et al.
patent: 5034604 (1991-07-01), Streetman et al.
patent: 5120393 (1992-06-01), Kubo et al.
patent: 5128538 (1992-07-01), Genova et al.
Journal of Vacuum Science and Technology: Part B, vol. 8, No. 2, Mar. 1990, NY. US, pp. 168-171; R. N. Sacks et al.: "Evaluation of a new high capacity, all-tantalum molecular-beam-epitaxy arsenic cracker furnace".
Journal of Vacuum Science and Technolgy: Part B, vol. 6, No. 6, Nov. 1988, NY US, pp. 1667-1670; Mattord et al: "baffle-free refractory dimer arsenic source for molecular-beam epitaxy".
Journal of Vacuum Science and Technology: Part B, vol. 3, No. 3, May 1985, NY, US, pp. 823-829; D. Huet et al: "molecular beam epitaxy of In0.53Ga0.47As and InP on InP bys using cracker cells".
Chardon Jean-Pierre
Goldstein Leon
Vergnaud Rene
Alcatel Alsthom Compagnie Generale d'Electricite
Berman Jack I.
Beyer James
LandOfFree
Effusion method and an effusion cell for forming molecular beams does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Effusion method and an effusion cell for forming molecular beams, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Effusion method and an effusion cell for forming molecular beams will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1251100