Efficiently fabricated bipolar transistor

Details Efficiently fabricated bipolar transistor Efficiently fabricated bipolar transistor

2005-12-06

2005-12-06

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Bipolar transistor

C257S205000, C257S350000, C257S477000, C257S526000, C257S552000, C438S235000, C438S309000, C438S312000

Reexamination Certificate

active

06972442

ABSTRACT:
One embodiment is a method for fabricating the base of a bipolar transistor where the method comprises placing a first wafer in an undoped epi chamber. Next a first undoped base layer is grown over the first wafer. After growing the first undoped base layer, the first wafer is transferred from the undoped epi chamber into a separate doped epi chamber. A first doped base layer is then grown over the first undoped based layer in the doped epi chamber. While the first wafer is being processed in the doped epi chamber, a second wafer can be processed in the undoped epi chamber. Another embodiment is a structure produced by the disclosed method and yet another embodiment comprises a transfer chamber, a transfer arm, a bake chamber, and a separate undoped epi chamber and a doped epi chamber for practicing the disclosed method.

REFERENCES:
patent: 4885614 (1989-12-01), Furukawa et al.
patent: 2002/0038874 (2002-04-01), Egashira

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