Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2008-01-08
2008-01-08
Hur, J. H. (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185200, C365S185210, C365S185190
Reexamination Certificate
active
07317638
ABSTRACT:
A non-volatile memory device is programmed by first performing a coarse programming process and subsequently performing a fine programming process. The coarse/fine programming methodology is enhanced by using an efficient verification scheme that allows some non-volatile memory cells to be verified for the coarse programming process while other non-volatile memory cells are verified for the fine programming process. The fine programming process can be accomplished using current sinking, charge packet metering or other suitable means.
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Fong Yupin
Guterman Daniel C.
Mokhlesi Nima
Hur J. H.
SanDisk Corporation
Vierra Magen Marcus & DeNiro LLP
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