Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2011-01-04
2011-01-04
Wojciechowicz, Edward (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S288000, C257S341000, C257S342000, C257S401000
Reexamination Certificate
active
07863657
ABSTRACT:
An integrated circuit comprises a first drain region having a symmetric shape across at least one of horizontal and vertical centerlines. A first gate region has a first shape that surrounds the first drain region. A second drain region has the symmetric shape. A second gate region has the first shape that surrounds the second drain region. A connecting gate region connects the first and second gate regions. A first source region is arranged adjacent to and on one side of the first gate region, the second gate region and the connecting gate region. A second source region is arranged adjacent to and on one side of side of the first gate region, the second gate region and the connecting gate region.
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Marvell World Trade Ltd.
Wojciechowicz Edward
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