Efficient P-channel FET drive circuit

Electrical transmission or interconnection systems – Nonlinear reactor systems – Parametrons

Patent

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Details

307573, 307574, 307270, 307443, 328223, H03K 17687, H03K 301, H03K 1716, H01J 1982

Patent

active

051151430

ABSTRACT:
A drive circuit for a P-channel FET is provided which uses a switch means to bias the P-channel FET into conduction and passive components to bias the P-channel FET out of conduction, reducing the components required in the drive circuit and the power dissipated. Energy stored in an inductor while the P-channel FET is conducting is used to provide current through a capacitor in series with the gate to source capacitance of the P-channel FET reducing the stored charge and turning off the P-channel FET.

REFERENCES:
patent: 4890021 (1989-12-01), Walker
patent: 4894568 (1990-01-01), Pavlin

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