Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2007-12-24
2011-12-13
Smith, Matthew (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S014000, C257SE33067, C438S029000
Reexamination Certificate
active
08076667
ABSTRACT:
A tight emitting device comprises at least one p-type layer and at least one n-type layer and a microlens array surface. A method for improving light efficiency of a light emitting device, comprises depositing polystyrene microspheres by rapid convection deposition on surface of light emitting device; depositing a monolayer of close-packed SIO2microspheres onto the polystyrene microspheres; and heal treating to convert the polystyrene microspheres into a planar microlayer film to provide a surface comprising substantially two-dimensional (2D) hexagonal close-packed SIO2colloidal microsphere crystals partially imposed into a polystyrene monolayer film.
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Arif Ronald A.
Ee Yik Khoon
Gilchrist James F.
Kumnorkaew Pisit
Tansu Nelson
Lehigh University
Saul Ewing LLP
Smith Matthew
Ullah Elias
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