Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1993-12-09
1994-10-25
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 13, 257103, H01L 29161, H01L 29205, H01L 29225, H01L 3300
Patent
active
053592093
ABSTRACT:
A light emitting diode includes a first conductivity type semiconductor substrate, a basic AlGaInP double heterostructure and two window layers of second conductivity type semiconductor. A layer of first conductivity type AlGaInP an undoped AlGaInP layer and a layer of second conductivity type AlGaInP form the double heterostructure. The AlGaInP layers are epitaxially grown above the substrate sequentially. The window layers contain one layer of GaAs and the other layer of GaP. The first window layer is formed by epitaxially growing GaAs over the AlGaInP heterostructure. The second window layer is formed by growing GaP directly on the first window layer using either OMVPE or vapor phase epitaxy (VPE) technology. The inclusion of a GaAs window layer increases current spreading and, hence, the efficiency of the device. The yield rate of manufacturing the light emitting diode is also increased because the quality of GaP layer surface is improved.
REFERENCES:
patent: 4680602 (1987-07-01), Watanabe et al.
patent: 4901326 (1990-02-01), Hayakawa et al.
patent: 5048035 (1991-09-01), Sugawara et al.
Jackson Jerome
Kelley Nathan K.
LandOfFree
Efficient light emitting diodes with modified window layers does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Efficient light emitting diodes with modified window layers, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Efficient light emitting diodes with modified window layers will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-137593