Computer-aided design and analysis of circuits and semiconductor – Design of semiconductor mask or reticle – Analysis and verification
Reexamination Certificate
2009-01-06
2011-12-13
Levin, Naum (Department: 2825)
Computer-aided design and analysis of circuits and semiconductor
Design of semiconductor mask or reticle
Analysis and verification
C716S051000, C430S005000
Reexamination Certificate
active
08078995
ABSTRACT:
Modeling of lithographic processes for use in the design of photomasks for the manufacture of semiconductor integrated circuits, and particularly to the modeling of the complex effects due to interaction of the illuminating light with the mask topography, is provided. An isofield perturbation to a thin mask representation of the mask is provided by determining, for the components of the illumination, differences between the electric field on a feature edge having finite thickness and on the corresponding feature edge of a thin mask representation. An isofield perturbation is obtained from a weighted coherent combination of the differences for each illumination polarization. The electric field of a mask having topographic edges is represented by combining a thin mask representation with the isofield perturbation applied to each edge of the mask.
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Graur Ioana
Rosenbluth Alan E.
Tirapu Azpiroz Jaione
Abate Esq. Joseph P.
International Business Machines - Corporation
Levin Naum
Scully , Scott, Murphy & Presser, P.C.
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