Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-04-12
2011-04-12
Auduong, Gene N. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185180, C365S185280
Reexamination Certificate
active
07924626
ABSTRACT:
A method for operating a dielectric charge trapping memory cell as described herein includes applying an initial voltage from the gate to the substrate of the memory cell for a predetermined period of time to reduce the threshold voltage of the memory cell. The method includes applying a sequence of voltages from the gate to the substrate of the memory cell to further reduce the threshold voltage of the memory cell, wherein a subsequent voltage in the sequence of voltages has a lower magnitude from the gate to the substrate than that of a preceding voltage in the sequence of voltages.
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Auduong Gene N.
Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
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