Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1995-01-20
1996-03-12
Meier, Stephen D.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257347, 257372, H01L 2904, H01L 31036, H01L 310376, H01L 3120
Patent
active
054988829
ABSTRACT:
Efficient control of the body voltage embodiment, the body node of a first field effect transistor is connected to the gate of the first transistor through a second field effect transistor. In another embodiment, the body node (p-) of a first transistor is connected to a drain (3) of the first transistor through a second transistor in an area efficient manner. The first and second transistors have a common drain (3) and the gate of the second transistor is an extension of the gate (G) of the first transistor.
REFERENCES:
patent: 4675561 (1987-06-01), Bowers
patent: 5095348 (1992-03-01), Hansen
Donaldson Richard L.
Garner Jacqueline J.
Hiller William E.
Meier Stephen D.
Texas Instruments Incorporated
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