Efficient charge transfer structure in large pitch charge couple

Details Efficient charge transfer structure in large pitch charge couple Efficient charge transfer structure in large pitch charge couple

1995-05-22

1998-01-06

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

257219, 257240, H01L 2478

Patent

active

057058369

ABSTRACT:
In a charge coupled device having a plurality of output structures, the plurality of output structures including first and second output structures, a channel structure is defined in a channel region beneath a gate electrode and coupled to each of the plurality of output structures. The channel structure includes a plurality of area structures, each area structure being characterized by a uniform potential which is different from the potential characterizing each of the other area structures. The plurality of area structures are arranged within the channel region to define a first increasing stepped potential gradient from any point within the channel region to the first output structure and define a second increasing stepped potential gradient from any point within the channel region to the second output structure. A length of each area structure traversing the area structure in a first gradient direction is less than or equal to a first critical length, the first critical length being defined by a first desired transfer time for transferring charge to the first output structure. A length of each area structure traversing the area structure in a second gradient direction is less than or equal to a second critical length, the second critical length being defined by a second desired transfer time for transferring charge to the second output structure.

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