Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-05-24
2005-05-24
Mai, Son (Department: 2818)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185200
Reexamination Certificate
active
06898124
ABSTRACT:
An exemplary sensing circuit comprises a first transistor connected to a first node, where a target memory cell has a drain capable of being connected to the first node through a selection circuit during a read operation involving the target memory cell. The sensing circuit further comprises a decouple circuit which is connected to the first transistor. The decouple circuit includes a second transistor having a gate coupled to a gate of the first transistor. The decouple circuit further has a decouple coefficient (N) greater than 1. The drain of the second transistor is connected at a second node to a reference voltage through a bias resistor. With the arrangement, the drain of the second transistor generates a sense amp input voltage at the second node such that the sense amp input voltage is decoupled from the first node.
REFERENCES:
patent: 5422854 (1995-06-01), Hirano et al.
patent: 5805500 (1998-09-01), Campardo et al.
patent: 5886925 (1999-03-01), Campardo et al.
patent: 6128225 (2000-10-01), Campardo et al.
patent: 6324098 (2001-11-01), Condemi et al.
He Yue-Song
Wang Zhigang
Yang Nian
Advanced Micro Devices , Inc.
Farjami & Farjami LLP
Mai Son
LandOfFree
Efficient and accurate sensing circuit and technique for low... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Efficient and accurate sensing circuit and technique for low..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Efficient and accurate sensing circuit and technique for low... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3384425