Efficiency of silicon solar cells containing chromium

Batteries: thermoelectric and photoelectric – Photoelectric – Cells

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136290, 148 15, 357 30, 357 63, 219121LN, H01L 3106, H01L 3118

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043118704

ABSTRACT:
Efficiency of silicon solar cells containing about 10.sup.15 atoms/cm.sup.3 of chromium is improved about 26% by thermal annealing of the silicon wafer at a temperature of 200.degree. C. to form chromium precipitates having a diameter of less than 1 Angstrom. Further improvement in efficiency is achieved by scribing laser lines onto the back surface of the wafer at a spacing of at least 0.5 mm and at a depth of less than 13 micrometers to preferentially precipitate chromium near the back surface and away from the junction region of the device. This provides an economical way to improve the deleterious effects of chromium, one of the impurities present in metallurgical grade silicon material.

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patent: 4249957 (1981-02-01), Koliwad et al.
E. Fogarassy et al., "Laser Treatment of Phosphorus-Diffused Silicon Solar Cells", Solar Cells, vol. 1, pp. 23-28 (1979/1980).
J. C. Muller et al., "Laser Processing in the Preparation of Silicon Solar Cells", IEEE Trans. Electron Devices, vol. ED-27, pp. 815-821 (1980).
G. F. Wakefield et al., "Influence of Impurities on Silicon Solar Cell Performance", Conf. Record, 11th IEEE Photovoltaic Specialists Conf. (1975), pp. 49-55.
D. E. Hill et al., "The Effect of Secondary Impurities on Solar Cell Performance", Conf. Record, 12th IEEE Photovoltaic Specialists Conf. (1976), pp. 112-119.

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