Effective solution and process to wet-etch metal-alloy films...

Details Effective solution and process to wet-etch metal-alloy films... Effective solution and process to wet-etch metal-alloy films...

2006-12-26

2006-12-26

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S754000, C134S003000

Reexamination Certificate

active

07153782

ABSTRACT:
A solution and method is described for etching TaN, TiN, Cu, FSG, TEOS, and SiN on a silicon substrate in silicon device processing. The solution is formed by combining HF at 49% concentration with H2O2at 29%–30% concentration in deionized water.

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