Patent
1988-03-22
1990-11-20
Larkins, William D.
357 4, H01L 2973
Patent
active
049722468
ABSTRACT:
A homojunction bipolar transistor having a superlattice base region comprising alternate layers of extrinsic and intrinsic layers, with extrinsic layers being of the opposite conductivity of the emitter and collector layers of the transistor. The alternate extrinsic and intrinsic layers have substantially different doping levels providing abrupt transitions in the valence and conduction bands between layers. The abrupt transitions result in the energy band gap in the base region being effectively reduced with respect to the band gap in the emitter region. In one embodiment, the effective narrow band gap base transistor is implemented by converting a portion of the upper layers of the superlattice to a homogeneous region by heavily doping the portion to form the emitter of the transistor.
REFERENCES:
patent: 4119994 (1978-10-01), Jain et al.
patent: 4137542 (1979-01-01), Chang et al.
patent: 4785340 (1988-11-01), Nakagawa et al.
K. Ploog et al., Growth and Properties of New Artificial Doping Superlattices in GaAs, Microelectronics Journal, vol. 13, No. 3, 1982.
P. Gavrilovic et al., Implantation Disordering of Al.sub.x Ga.sub.1-x As Superlattices, Apply. Phys. Lett. 47(2), 15 Jul. 1985.
G. H. Dohler et al., Quantization of Photoexcited Electrons in GaAs nipi Crystals, Surface Science 113 (1982), 479-480.
Brodsky Marc H.
Fang Frank F.
Meyerson Bernard S.
International Business Machines Corp.
Larkins William D.
LandOfFree
Effective narrow band gap base transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Effective narrow band gap base transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Effective narrow band gap base transistor will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-457276