Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-10-11
2005-10-11
Nguyen, Viet Q. (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185240, C365S185180, C365S185140, C365S185100
Reexamination Certificate
active
06954381
ABSTRACT:
Novel memory cells utilize source-side injection, allowing very small programming currents. If desired, to-be-programmed cells are programmed simultaneously while not requiring an unacceptably large programming current for any given programming operation. In one embodiment, memory arrays are organized in sectors with each sector being formed of a single column or a group of columns having their control gates connected in common. In one embodiment, a high speed shift register is used in place of a row decoder to serially shift in data for the word lines, with all data for each word line of a sector being contained in the shift register on completion of its serial loading. In one embodiment, speed is improved by utilizing a parallel loaded buffer register which receives parallel data from the high speed shift register and holds that data during the write operation, allowing the shift register to receive serial loaded data during the write operation for use in a subsequent write operation. In one embodiment, a verification is performed in parallel on all to-be-programmed cells in a column and the bit line current monitored. If all of the to-be-programmed cells have been properly programmed, the bit line current will be substantially zero. If bit line current is detected, another write operation is performed on all cells of the sector, and another verify operation is performed This write/verify procedure is repeated until verification is successful, as detected or substantially zero, bit line current.
REFERENCES:
patent: 4074304 (1978-02-01), Shiba
patent: 4112507 (1978-09-01), White et al.
patent: 4151020 (1979-04-01), McElroy
patent: 4151021 (1979-04-01), McElroy
patent: 4184207 (1980-01-01), McElroy
patent: 4202044 (1980-05-01), Beilstein, Jr. et al.
patent: 4271421 (1981-06-01), McElroy
patent: 4302766 (1981-11-01), Guterman et al.
patent: 4331968 (1982-05-01), Gosney, Jr. et al.
patent: 4380057 (1983-04-01), Kotecha et al.
patent: 4456971 (1984-06-01), Fukuda et al.
patent: 4462090 (1984-07-01), Iizuka
patent: 4488265 (1984-12-01), Kotecha
patent: 4531203 (1985-07-01), Masuoka et al.
patent: 4561004 (1985-12-01), Kuo et al.
patent: 4575925 (1986-03-01), Kanbara et al.
patent: 4583201 (1986-04-01), Bertin et al.
patent: 4616340 (1986-10-01), Hayashi et al.
patent: 4616402 (1986-10-01), Mori
patent: 4622656 (1986-11-01), Kamiya et al.
patent: 4652897 (1987-03-01), Okuyama et al.
patent: RE32401 (1987-04-01), Beilstein, Jr. et al.
patent: 4663827 (1987-05-01), Nakahara
patent: 4677736 (1987-07-01), Brown
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 4794565 (1988-12-01), Wu et al.
patent: 4803529 (1989-02-01), Masuoka
patent: 4805142 (1989-02-01), Bertin et al.
patent: 4811285 (1989-03-01), Walker et al.
patent: 4811294 (1989-03-01), Kobayashi et al.
patent: 4821236 (1989-04-01), Hayashi et al.
patent: 4885719 (1989-12-01), Brahmbhatt
patent: 4907197 (1990-03-01), Uchida
patent: 4907198 (1990-03-01), Arima
patent: 4943962 (1990-07-01), Imamiya et al.
patent: 4979146 (1990-12-01), Yokoyama et al.
patent: 4989053 (1991-01-01), Shelton
patent: 4989054 (1991-01-01), Arima et al.
patent: 4990979 (1991-02-01), Otto
patent: 4997781 (1991-03-01), Tigelaar
patent: 5011787 (1991-04-01), Jeuch
patent: 5017515 (1991-05-01), Gill
patent: 5021999 (1991-06-01), Kohda et al.
patent: 5028553 (1991-07-01), Esquivel et al.
patent: 5029130 (1991-07-01), Yeh
patent: 5034926 (1991-07-01), Taura et al.
patent: 5036017 (1991-07-01), Noda
patent: 5045488 (1991-09-01), Yeh
patent: 5049516 (1991-09-01), Arima
patent: 5057886 (1991-10-01), Riemenschneider et al.
patent: 5067108 (1991-11-01), Jenq
patent: 5070032 (1991-12-01), Yuan et al.
patent: 5081054 (1992-01-01), Wu et al.
patent: 5081056 (1992-01-01), Mazzali et al.
patent: 5095344 (1992-03-01), Harari
patent: 5147816 (1992-09-01), Gill et al.
patent: 5159570 (1992-10-01), Mitchell et al.
patent: 5163021 (1992-11-01), Mehrotra et al.
patent: 5172338 (1992-12-01), Mehrotra et al.
patent: 5194925 (1993-03-01), Ajika et al.
patent: 5197027 (1993-03-01), Challa
patent: 5204841 (1993-04-01), Chappell et al.
patent: 5218569 (1993-06-01), Banks
patent: 5225361 (1993-07-01), Kakiuchi et al.
patent: 5245566 (1993-09-01), Masuoka
patent: 5247485 (1993-09-01), Ide
patent: 5264384 (1993-11-01), Kaya et al.
patent: 5267195 (1993-11-01), Kodama
patent: 5278439 (1994-01-01), Ma et al.
patent: 5279982 (1994-01-01), Crotti
patent: 5280446 (1994-01-01), Ma et al.
patent: 5284784 (1994-02-01), Manley
patent: 5291439 (1994-03-01), Kauffmann et al.
patent: 5297148 (1994-03-01), Harari et al.
patent: 5303187 (1994-04-01), Yu
patent: 5313421 (1994-05-01), Guterman et al.
patent: 5323355 (1994-06-01), Kato
patent: 5355347 (1994-10-01), Cioaca
patent: 5364806 (1994-11-01), Ma et al.
patent: 5377147 (1994-12-01), Merchant et al.
patent: 5378643 (1995-01-01), Ajika et al.
patent: 5394357 (1995-02-01), Yu
patent: 5396468 (1995-03-01), Harari et al.
patent: 5402371 (1995-03-01), Ono
patent: 5412600 (1995-05-01), Nakajima
patent: 5414693 (1995-05-01), Ma et al.
patent: 5420060 (1995-05-01), Gill et al.
patent: 5445983 (1995-08-01), Hong
patent: 5468663 (1995-11-01), Bertin et al.
patent: 5491657 (1996-02-01), Haddad et al.
patent: 5579259 (1996-11-01), Samachisa et al.
patent: 5606521 (1997-02-01), Kuo et al.
patent: 5629890 (1997-05-01), Engh
patent: 5656840 (1997-08-01), Yang
patent: 5675537 (1997-10-01), Bill et al.
patent: 5708285 (1998-01-01), Otani et al.
patent: 5712180 (1998-01-01), Guterman et al.
patent: 5745475 (1998-04-01), Ohno et al.
patent: 5754469 (1998-05-01), Hung et al.
patent: 5757044 (1998-05-01), Kubota
patent: 5768287 (1998-06-01), Norman et al.
patent: 5771346 (1998-06-01), Norman et al.
patent: 5776810 (1998-07-01), Guterman et al.
patent: 5818757 (1998-10-01), So et al.
patent: 5856943 (1999-01-01), Jeng
patent: 5867430 (1999-02-01), Chen et al.
patent: 5999451 (1999-12-01), Lin et al.
patent: 6293337 (2001-09-01), Strahle et al.
patent: 6317363 (2001-11-01), Guterman et al.
patent: 6493269 (2002-12-01), Cernea
patent: 0373830 (1990-06-01), None
patent: 0725403 (1996-08-01), None
patent: 55087491 (1980-07-01), None
patent: 57091561 (1982-06-01), None
patent: 359121980 (1984-07-01), None
patent: 360009168 (1985-01-01), None
patent: 61131484 (1986-06-01), None
patent: 6-1181168 (1986-08-01), None
patent: 363276791 (1988-11-01), None
patent: 1-304784 (1989-12-01), None
patent: 2-360 (1990-01-01), None
patent: WO 90/12400 (1990-10-01), None
patent: WO 97/22123 (1997-06-01), None
G.S. Alberts and H.N Kotecha, “Multibit Storage FET EAROM Cell”. Dec. 1981. IBM Technical Disclosure Bulletin, vol. 24, Issue No. 7A, p. No. 3311-3314.
K. Naruke et al., “A New Flash-Erase EEPROM Cell with A Sidewall Select-Gate On Its Source Side”, IEDM 89-603, IEEE (1989), pp. 603-606.
M. Kamiya et al., “EPROM Cell with High Gate Injection Efficiency”, IEDM 82-741, IEEE (1982), p. 741-744.
J. Van Houdt, et al., “A 5-Volt-Only Fast-Programmable Flash EEPROM Cell with A Double Polysilicon Split-Gate Structure”, Interuniversity Microelectronics Center (Feb. 1991).
Yale Ma, et al. “A Dual-bit Split-Gate EEPROM (DSG) Cell in Contactless Array for Single-Vcc High Density Flash Memories”, IEDM 94-57, IEEE (1994), pp. 57-60.
G.S. Alberts et al., “Multi-Bit Storage FET EAROM Cell”, G.S.IBM Technical Disclosure Bulletin, vol. 24, No. 7A (Dec. 1981), pp. 3311-3314.
Takeshi Nakayama, “A 5-V-only One-Transistor 256K EEPROM with Page-Mode Erase”, IEEE (Aug. 1989), vol. 24, No. 4, pp. 911-915.
Mike McConnell, et al., “An Experimental 4-Mb Flash EEPROM with Sector Erase”, IEEE (Apr. 1991), vol. 26, No. 4, pp. 484-489.
Masaki Momodomi, et al., “A-4-Mb Flash EEPROM with Tight Programmed V, Distribution”, IEEE (Apr. 1991), vol. 26, No. 4, pp. 492-495.
Fujio Masuoka, et al., “A 256-kbit Flash E2PROM Using Triple-Polysilicon Technology”, IEEE (Aug. 1987).
Dumitru Cioaca, et al., “A Million-Cycle 256K EEPROM”, IEEE (Oct. 1987), vol. SC-22, No.
Fong Yupin Kawing
Guterman Daniel C.
Harari Eliyahou
Samachisa Gheorghe
Nguyen Viet Q.
Parsons Hsue & de Runtz LLP
SanDisk Corporation
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