EEPROM with sidewall control gate

Details EEPROM with sidewall control gate EEPROM with sidewall control gate

1986-02-24

1988-06-28

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 41, 357 51, 357 233, 357 2314, 365185, H01L 2978, H01L 2944

Patent

active

047543205

ABSTRACT:
A semiconductor device, and more particularly, an erasable programmable read only memory has a control gate electrode and a floating gate electrode. The floating gate electrode is formed on one side wall of the control gate electrode through an insulating film.

REFERENCES:
patent: 4462090 (1984-07-01), Iizuka
Mizutani et al., "A New EPROM . . . Device", IEDM, Dec. 1985, pp. 635-637.
Verwy & Kramer, "ATMOS . . . Device", IEEE Trans. on Elec. Dev., vol. ED-21, No. 10, Oct. 74, pp. 631-635.
Patent Abstracts of Japan, vol. 2, No. 120, Oct. 6, 1978, p. 7046 E78 (Japan Patent Office, Tokyo).
Patent Abstracts of Japan, vol. 6, No. 264, Dec. 23, 1982, 1142 E150 (Japan Patent Office, Tokyo).

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