EEPROM with protective circuit

Details EEPROM with protective circuit EEPROM with protective circuit

1989-01-30

1990-03-20

Fears, Terrell W.

Static information storage and retrieval

Floating gate

Particular biasing

365106, 307310, G11C 1300, G11C 1140

Patent

active

049107070

ABSTRACT:
A monolithically integrated MOS circuit includes a memory area having electrically programmable storage cells (E.sup.2 PROM) with outputs, a potential source, at least one blocking circuit for connecting at least one of the outputs to the potential source, and a radiation sensitive sensor connected to the blocking circuit for controlling the connection of the outputs to the potential source.

REFERENCES:
patent: 3551761 (1970-12-01), Ruoff
patent: 3696250 (1972-10-01), Weimer
patent: 3721963 (1973-03-01), Tenne
patent: 4499557 (1985-02-01), Holmberg
patent: 4608672 (1986-08-01), Roberts et al.
patent: 4612629 (1986-09-01), Harari
patent: 4677742 (1987-07-01), Johnson
patent: 4714901 (1987-12-01), Jain et al.
patent: 4722822 (1988-02-01), Thai et al.
patent: 4789964 (1988-12-01), Krilic
Journal "Electronics" Feb. 28, 1980, pp. 113-117.
Patent Abstract of Japan vol. 6, No. 188, Jun. 18, 1982.

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