1987-04-07
1988-03-29
Edlow, Martin H.
357 63, 357 54, H01L 2978, H01L 2967, G11C 1140
Patent
active
047334827
ABSTRACT:
Insulating layers responsible for the trapping of electric charge in non-volatile semiconductor memories, such as FAMOS or MNOS, are fabricated as thicker layers when doped with metals having partially filled d or f electron shells. Typically the insulating layer is silicon oxide doped with up to 10 atomic % of a first transition series metal.
REFERENCES:
patent: 4494996 (1985-01-01), Ohno et al.
Delima Jaoquim J.
Krishna Komanduri V.
Owen Alan E.
West James L.
Edlow Martin H.
Float Kenneth W.
Hughes Microelectronics Limited
Karambelas A. W.
Lamont John
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