Eeprom semiconductor memory device including circuit for generat

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365227, 36518501, 36518517, G11C 800

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057062412

ABSTRACT:
A semiconductor memory device comprising a memory cell array of a plurality of memory cells formed and arranged on either a semiconductor substrate or a well of a first conductivity type formed on said semiconductor substrate, a plurality of voltage generating circuits for applying said memory cells voltages that are higher than the power supply voltage and different from each other and a switching circuit for selectively connecting the output nodes of said plurality of voltage generating circuits.

REFERENCES:
"On-Chip High-Voltage Generation in MNOS Integrated Circuits Using an Improved Voltage Multiplier Technique", IEEE Journal of Solid-State Circuits, vol. SC-11, No. 3, John F. Dickson, pp. 374, 376, 378, Jun. 1976 .

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