EEPROM semiconductor memory device

Details EEPROM semiconductor memory device EEPROM semiconductor memory device

1989-04-28

1991-05-21

Jackson, Jr., Jerome

357 54, 357 59, H01L 2968, H01L 2934, H01L 2904

Patent

active

050179799

ABSTRACT:
A gate oxide film is formed on a surface of a semiconductor substrate. A tunnel insulating film having a thickness smaller than that of the gate insulating film is formed in a portion thereof corresponding to a tunnel region. A first silicon film having a low impurity concentration is formed on the gate insulating film. A second silicon film having an impurity concentration higher than that of the first silicon film is formed on the first silicon film so as to be connected thereto. A third silicon film is formed on the second silicon film through an insulating film. The second and third silicon films are formed into floating and control gates, respectively, thereby forming a semiconductor memory device.

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IEEE Transactions on Electron Devices, vol. 35, No. 7, Jul. 1988.
IEEE Transactions on Electron Devices, vol. 35, No. 10, Oct. 1988.
IEEE, "Electrical Properties of Nitrided-Oxide Systems for Use in Gate Dielectrics and EEPROM".
J. Vac. Sci. Techn. B 5 (3), May/Jun. 1987.

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