EEPROM memory with contactless memory cells

Details EEPROM memory with contactless memory cells EEPROM memory with contactless memory cells

1996-05-03

1998-02-10

Nguyen, Tan T.

Static information storage and retrieval

Floating gate

Particular connection

36518506, 36518511, G11C 1600

Patent

active

057176361

ABSTRACT:
In a flash-EEPROM array, the cells in each row are grouped into pairs connected to the same diffused source line and to two different diffused bit lines, and the adjacent pairs of cells are spaced so that, in each row, only one cell is connected to a respective diffused bit line. The array presents global bit lines in the form of metal lines, and each connected to a plurality of diffused local bit lines, at least one for each sector. For each sector and each global bit line, there are provided two diffused local bit lines connected to the same respective global bit line by selection transistors so that only one local bit line is biased each time.

REFERENCES:
patent: 4130890 (1978-12-01), Adam
patent: 5117269 (1992-05-01), Bellezza et al.
patent: 5245570 (1993-09-01), Fazio et al.
patent: 5392252 (1995-02-01), Rimpo et al.
patent: 5570319 (1996-10-01), Santoro et al.
Eitan, Boaz et al., "Alternate Metal Virtual Ground (AMB)--A New Scaling Concept for Very High-Density EPROM's", IEEE Electron Device Letters, vol. 12, No. 8, Aug. 1991, pp. 450-452.
Kammerer, W. et al., "A New Virtual Ground Array Architecture for Very High Speed, High Density EPROMS", IEDM 1991, Digest of Technical Papers, Dec. 1991, pp. 83, 84.

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