EEPROM memory device with simultaneous read and write sector cap

Details EEPROM memory device with simultaneous read and write sector cap EEPROM memory device with simultaneous read and write sector cap

1996-05-03

1998-05-05

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular connection

36518511, 36523006, G11C 1606

Patent

active

057485283

ABSTRACT:
A memory device having a memory array, a row decoding unit, a column decoding unit, and a control unit; the memory array presents global bit lines extending along the whole of the array and connected to respective local bit lines, one for each of the sectors; a switch is provided between the global bit lines and each respective local bit line to selectively connect a selected global bit line and only one of the associated local bit lines; and the switches are controlled by local decoding units over control lines, to address the sectors independently and so perform operations (read, erase, write) simultaneously in two different sectors in different rows and columns.

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Eitan, Boaz et al., "Alternate Metal Virtual Ground (AMG)--A New Scaling Concept for Very High-Density EPROM's" in IEEE Electron Device Letters, Aug. 1991, vol. 12, No. 8.
Kammerer, W. et al., A new Virtual Ground Array Architecture For Very High Speed; High Density EPROMS, 1991 Symposium on VLSI Circuits, May 30-Jun. 1, 1991, Oiso, Japan.

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