Eeprom memory cell with a single polysilicon level and a tunnel

Details Eeprom memory cell with a single polysilicon level and a tunnel Eeprom memory cell with a single polysilicon level and a tunnel

1987-11-12

1989-04-18

Fears, Terrell W.

Static information storage and retrieval

Floating gate

Particular biasing

365182, 365149, 365150, 357 235, 357 236, G11C 1300, G11C 1140

Patent

active

048233161

ABSTRACT:
The memory cell comprises a selection transistor, pickup transistor and a tunnel condenser formed using a single layer of polysilicon. The tunnel condenser is formed on an active area distinct and separate from that of the pickup transistor.

REFERENCES:
patent: 4754320 (1988-06-01), Mizutani et al.

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