EEPROM device with substrate hot-electron injector for...

Details EEPROM device with substrate hot-electron injector for... EEPROM device with substrate hot-electron injector for...

2007-07-17

2007-07-17

Menz, Douglas M. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Gate arrays

With particular signal path connections

C257S314000, C365S185010

Reexamination Certificate

active

11042866

ABSTRACT:
A low programming power, high speed EEPROM device is disclosed which is adapted for large scale integration. The device comprises a body, a source, a drain, and it has means for injecting a programming current into the body. The hot carriers from the body enter the floating gate with much higher efficiency than channel current carriers are capable of doing. The drain current of this device is controlled by the body bias. The device is built on an insulator, with a bottom common plate, and a top side body. These features make the device ideal for SOI and thin film technologies.

REFERENCES:
patent: 6064595 (2000-05-01), Logie et al.
patent: 6091635 (2000-07-01), Chi et al.
patent: 6734490 (2004-05-01), Esseni et al.

Affiliated with

Also associated with

Rating

EEPROM device with substrate hot-electron injector for... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with EEPROM device with substrate hot-electron injector for..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and EEPROM device with substrate hot-electron injector for... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3799035