EEPROM cell and EEPROM block

Details EEPROM cell and EEPROM block EEPROM cell and EEPROM block

2006-06-13

2009-06-30

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular connection

C365S185110, C365S185200, C365S185180

Reexamination Certificate

active

07554845

ABSTRACT:
The EEPROM cell includes a writing unit having a flash cell Metal Oxide Semiconductor (MOS) for receiving from outside a gate selection signal via a gate and a drain selection signal via a drain, and writing one bit data, and a high-voltage MOS whose source is connected to a source of the flash cell MOS to have a symmetrical structure and for receiving the gate selection signal via a gate, and a sensing unit having a first sensing MOS whose source is connected to a power supply voltage, gate to a drain of a second sensing MOS and drain to the drain of the flash cell MOS, and the second sensing MOS whose source is connected to the power supply voltage, gate to the drain of the first sensing MOS and drain to the drain of the high-voltage MOS.

REFERENCES:
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patent: 4571704 (1986-02-01), Bohac, Jr.
patent: 4685083 (1987-08-01), Leuschner
patent: 4780750 (1988-10-01), Nolan et al.
patent: 5097449 (1992-03-01), Cuevas
patent: 6603344 (2003-08-01), Yung
patent: 7307872 (2007-12-01), Kang et al.
patent: 1997-0003264 (1997-01-01), None
patent: 1997-0023377 (1997-05-01), None
patent: 1998-0084907 (1998-12-01), None

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