EEPROM and method of driving the same

Details EEPROM and method of driving the same EEPROM and method of driving the same

2006-09-21

2009-02-10

Lam, David (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185280, C365S185290

Reexamination Certificate

active

07489550

ABSTRACT:
An EEPROM (Electrically Erasable and Programmable Read Only Memory) has a first MOS transistor and a second MOS transistor. The first MOS transistor and the second MOS transistor have a common gate electrode and constitute one memory cell. A program operation and an erase operation are carried out by using the first MOS transistor. A read operation is carried out by using the second MOS transistor.

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patent: 06-334190 (1994-12-01), None
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