EEPROM and method for fabricating the same

Details EEPROM and method for fabricating the same EEPROM and method for fabricating the same

1996-12-12

1998-01-20

Yoo, Do Hyun

Static information storage and retrieval

Floating gate

Particular biasing

36518501, 257319, G11C 1602

Patent

active

057107351

ABSTRACT:
An EEPROM including a selecting gate which overlaps with one side of a floating gate and a certain part of a source electrode and a control gate which overlaps with the other side of the floating gate and a certain part of a drain electrode, is improved in charge coupling ratio, showing an increase in program efficiency even at low outer voltages. Application of low outer voltages to the EEPROM brings about a decrease in both the breakdown voltage and the junction breakdown voltage of the gate oxide film of peripheral transistors, allowing a shallow junction and a thin gate oxide film process to be possible. A shallow junction can be effected by an ion-implanting process which results in formation of a source electrode and a drain electrode.

REFERENCES:
patent: 4988635 (1991-01-01), Ajika et al.
patent: 5284784 (1994-02-01), Manley
patent: 5455792 (1995-10-01), Yi
patent: 5494838 (1996-02-01), Chang et al.
patent: 5498559 (1996-03-01), Chang

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