EDRAM including metal plates

Details EDRAM including metal plates EDRAM including metal plates

2011-05-17

2011-05-17

Gurley, Lynne A (Department: 2811)

Semiconductor device manufacturing: process

Making passive device

Trench capacitor

C257S296000, C257S301000, C257S303000, C257S306000, C257S330000, C257SE27095, C257SE29260, C257SE29346, C257SE21396, C257SE21651, C438S243000, C438S244000, C438S259000, C438S270000, C438S387000

Reexamination Certificate

active

07943474

ABSTRACT:
A method for forming a memory device is provided by first forming at least one trench in a semiconductor substrate. Next, a lower electrode is formed in the at least one trench, and thereafter a conformal dielectric layer is formed on the lower electrode.An upper electrode is then formed on the conformal dielectric layer. The forming of the upper electrode may include a conformal deposition of metal nitride layer, and a non-conformal deposition of an electrically conductive material atop the metal nitride layer, in which the electrically conductive material encloses the at least one trench.

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patent: 2007/0007624 (2007-01-01), Kapteyn et al.

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